Home - Products - CVD Coating Machine - PECVD plasma chemical vapor deposition system with mass flow meter for SiO2 and SiNx
It is suitable for the deposition of SiO2 and SiNx thin films at room temperature to 1200 °C, and can also realize TEOS source deposition, SiC film layer deposition and liquid gas source deposition of other materials. It is especially suitable for high-efficiency protective layers on organic materials.
Technical Parameters
Product Description:
This product is composed of solid-state plasma source, gas proton flow control system, substrate temperature control system and vacuum system, and adopts operating software with centralized bus control technology. It is suitable for the deposition of SiO2 and SiNx thin films at room temperature to 1200 °C, and can also realize TEOS source deposition, SiC film layer deposition and liquid gas source deposition of other materials. It is especially suitable for high-efficiency protective layers on organic materials.
Product Features:
1. Clean the coating in one go to prevent secondary pollution;
2. The upper open structure is convenient for observing the sample;
3. The product adopts automatic control mode, touch screen and digital display;
4. High degree of equipment integration;
5. Stable RF power supply, uniform temperature distribution, improve film quality;
Technical Parameters：
| Product Model | KS-PECVD-T1200-80 |
| Voltage supply | AC220V single phase or customized |
| Power rate | 4Kw |
| Max temperatures | 1200C (less than 1 hour) |
| Working temperature | ≤1100C |
| Heating rate | ≤ 20C/min |
| RF power | 300W or 500W,13.56Mhz |
| Furnace tube size | Ø80×1200mm |
| Temperature Accuracy | 1C |
| Vacuum Degree | ≤10Pa (with mechanical pump) |
| Air supply system | two mass flow meter |
| Service support | 1-year warranty with lifetime support (consumable parts such as furnace tubes and seals are not included in the warranty). |
