Microwave plasma chemical vapor deposition for diamond growth

Inquire Now

Technical Parameters

KS-MPCVD2060 Microwave Plasma Chemical Gas Phase Deposition (MPCVD) system is a multi-purpose, high-stable medium-pressure Microwave plasma (MPCVD) comprehensive processing equipment designed and developed for the specific requirements of users.It has advanced performance, perfect function, reasonable structure, convenient to use, safe and reliable, beautiful appearance, especially suitable for single crystal and polycrystal diamond film, diamond film chemical vapor deposition (CVD); material surface treatment and modification; low-temperature oxide growth and other fields.

Technical Parameters:

1) Microwave sources and systems
Operating frequency	2,450 M H z point frequency
output power	0.1~ 6kW Continuous adjustable4
Power stability	1% (@ Steady-state)
standard flange input power supply	380VAC / 50Hz, three-phase and five-line
cooling water flow rate	18 L/min
System resident wave coefficient	VSWR 1.5
Microwave leakage	Compliance with national standards
2）Microwave vacuum discharge cavity
Size and working mode	Φ 200*300 (H) TM
mode effective deposition area	Φ 50mm
Pressure control range	0.5KPa~30KPa
Pressure control accuracy	±15Pa
3）productive power
crystal growth	Growth rate of 10-15 m / H, single round growth, thickness greater than or equal to 1.6mm single crystal mass,There are basically no defects to the naked eye
4）vacuum and sub-atmospheric system
Breaking mode	Charge, enter, N2.
Limit vacuum degree	excel 5×10ˉ¹Pa
Vacuum leakage rate	≤10-9Pa.m³/s ，
voltage reise	24-Hour average pressure rise is less than 1Pa / H 5) Gas mass flow system
control range	2%-100%F.S., Entrance pressure is 0.2-0.3MPa
Gas type and measuring range	H2 (1SLM), CH4 (100SCCM), O2 (10SCCM), N2 (20SCCM)
6) Sample table system
Sample table diameter	Φ 60 mm,
water-cooled structure; sample table adjustment range	0~15 mm
Cinal plate adjustment range	0~60 mm
7) Base measurement
Temperature control range(infrared temperature measurement);	600~1200℃
temperature control accuracy	± 5℃;
Control range of the constant temperature area	the temperature difference at each point of the molybdenum platform is 30℃
8）insulation resistance	≥5MΩ

CVD diamond, MPCVD, microwave plasma chemical vapor deposition

Product Categories