Home - Products - CVD Coating Machine - high temperature PECVD system for carbon nanotube/plasma enhanced chemical vapor deposition
PECVD system, by ionizing atom-containing gas with microwave or radio frequency, create active plasma locally, which will react easily to deposit and form the expected thin film.
Technical Parameters
PECVD system, by ionizing atom-containing gas with microwave or radio frequency, create active plasma locally, which will react easily to deposit and form the expected thin film. It widely used to product high-quality SiO2 film, Si3N4 film,diamond film, hard thin film, optical thin film, CNT, C/Ccomposite materials, SiC coating, Graphene etc.
Technical Parameters:
| Model | KS-PECVD-T1200 |
| Max temperature | 1200C |
| Working temperature | 1100C |
| Chamber | Split type and upper part can be opened |
| Heating element | Resistance wire with Mo |
| Fiber liner | 1430 Type alumina fiber |
| Temperature zone | 220+220mm dual zones (can customized) |
| Power | 220V, 50Hz, single phase at Max 3 Kw (can customized) |
| Gas control | Float flow meter/ Mass flow meter |
| Vacuum unit | Rotary vane/Diffusion/Turbo molecular pump |
| RF power | 100-1000Kw |
| Optional parts | water chiller/ digital vacuum gauge |
