Home - Products - CVD Coating Machine - high-temperature MIST and LPCVD system consists of high-frequency induction heating equipment
KS-LPCVD-1500 is a MIST/LPCVD system designed for the epitaxial growth
of thin films on various substrates up to 1500°C heated by induction.It is a unique tool for high-temperature thin film growth, especially
for next-generation semiconductors, such as Ga2O3 and BN.
Technical Parameters
Product Description:
KS-LPCVD-1500 is a MIST/LPCVD system designed for the epitaxial growth of thin films on various substrates up to 1500°C heated by induction. It features an induction-heated graphite substrate holder with precise PID control. The boron nitride (BN) shower head enables a uniform deposition of precursors on a substrate at an elevated temperature. The system also comes with a hermetic quartz chamber for LPCVD without worries of precursor leaks. It is a unique tool for high-temperature thin film growth, especially for next-generation semiconductors, such as Ga2O3 and BN.
Technical parameters:
| Product Model | KS-LPCVD-1500 |
| · Input voltage | three-phase 380±20% 50/60Hz |
| · Input power | 15KW |
| · Output current | 7-70A |
| · Oscillating frequency | 30-100KHZ |
| · Protection system | with water pressure, overheating, overpower protection |
| · Dimensions of the heating system | coil inner diameter Φ220mm, height 70mm, wound with Φ8 water-cooled copper tube, 4 turns |
| Cooling water requirements | water pressure ≥ 0.2Mpa water flow ≥ 6L/min; The temperature was set at 30°C. |
| Quartz furnace tube | Φ8.5”*500mm |
| Graphite sample stage | inner diameter φ155mm (6-inch substrate can be placed) |
| · Insulation material | graphite felt |
| · Maximum temperature | 1600℃<1h, long-term use at 1500℃ |
| · Recommended heating rate | ≤2℃/S |
| · Pressure gauge range | -0.1-0.15MPa |
| Gas-liquid mixing tank material | 316 stainless steel |
| · Volume of tank | 100ml |
